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TITLE: IBM DOUBLE-GATE TRANSISTORS
IBM has developed a new type of transistor that promises to
improve chip performance and reduce power consumption. The
"Double-Gate" transistor has been fabricated in IBM's SOI
(silicon-on-insulator) process and nearly doubles the speed of
today's transistors while improving control over the electric
current and hence the power dissipation. The developers overcame
problems with electrical leakage, high energy demands and poor
electrical flow.
For additional information, access: DOUBLE-GATE
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FILENUMBER: 1037
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IBM DOUBLE-GATE TRANSISTORS
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DATE: December 2001
TITLE: IBM DOUBLE-GATE TRANSISTORS
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