MICROELECTRONIC SYSTEMS NEWS

FILENUMBER: 1063 BEGIN_KEYWORDS CHIP INDUSTRY MASK COSTS MOSIS END_KEYWORDS DATE: July 2002 TITLE: CHIP INDUSTRY TACKLES ESCALATING MASK COSTS
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TITLE: CHIP INDUSTRY TACKLES ESCALATING MASK COSTS

    By Ron Wilson, EE Times
    
	Jun 17, 2002

EE  TIMES -- June 17, 2002


The rapid increase in the cost of photomask sets for advanced  IC
processes  has made a lot of news in recent months. When word got
around that a mask set for leading-edge  130-nanometer  processes
could  cost  more  than  $1  million  and for 90-nm processes, $2
million, the semiconductor industry went into a collective  state
of  shock.  But  behind  the  scenes forces are converging on the
problem with a variety of solutions.

Perhaps the most obvious, given the huge  number  of  transistors
that  can be fit into the real estate covered by a reticle, is to
share  the  masks.  The  technique,  commonly  referred   to   as
multiproject  wafers, has been used as a means of prototyping and
to provide limited runs for university projects  for  years.  The
acknowledged  leader  in  this  area  has  been a relatively low-
profile not-for-profit organization, the MOSIS Service.

Originally funded  by  the  Defense  Advanced  Research  Projects
Agency,   MOSIS   was  conceived  in  the  early  1980s  to  give
researchers subsidized access to a foundry. Cut loose from  DARPA
funding  in  1994, the organization still serves universities and
research centers. But it is also emerging as an important  access
point  into  the foundry industry for commercial ventures needing
test chips, prototype runs or increasingly   moderate  production
runs at sharply reduced mask costs.

Working closely with both clients and foundries including  Taiwan
Semiconductor  Manufacturing  Co. and IBM Microelectronics, MOSIS
packs a number of client designs into a single mask set and  then
has the wafers processed at the appropriate fabrication facility.
The company now can return anything from wafers to dice to  fully
packaged  ICs from the run. The service is available for anything
from a run of 40 test chips to a  few  thousand  production  ICs.
Available  processes  include  TSMC's  180-, 250- and 350-nm CMOS
logic and mixed-signal  processes,  and  IBM's  250-  and  500-nm
silicon germanium BiCMOS processes, among others.

The addition of SiGe means a new relationship between  MOSIS  and
its  clients,  said  deputy  director Wes Hansford. "A lot of our
growth now is coming from commercial design teams exploring their
technology  options," he said. "They may want to compare what can
be done in CMOS and SiGe,  for  example,  and  we  give  them  an
affordable  way  to  actually  build  chips  in  each process and
compare them."

Hansford said that the service is also being used to  manage  the
perceived risks involved in new circuit development, particularly
with mixed-signal designs. A design team may create a set of test
patterns  intended only for cell characterization. Or it may tape
out an entire functional block  of  its  intended  system-on-chip
(SoC)  to  examine not only the parametric characteristics of the
devices, but the overall functional behavior. Either way, the die
area   involved   is  quite  small,  and  the  mask  cost  for  a
conventional run would be prohibitive.

Even using the foundries' existing prototype  services,  such  as
TSMC's  CyberShuttle,  can  present  a  problem  for  such  small
objects. For example, CyberShuttle divides  the  maximum  reticle
area into fixed regions, and the user has to pay for some integer
number of regions. MOSIS, in  contrast,  hand-packs  the  designs
into  the  reticle,  so it does not have any fixed size or aspect
ratio requirements, said Hansford.

Although characterization and prototyping  are  the  conventional
uses  of  the service, Hansford said that there is also a growing
use of MOSIS as a production shop. With a  minimum  run  of  even
200-mm  wafers  in  180  nm  yielding a huge number of dice, many
designs may never reach what TSMC would regard as production.  So
the  ability  to  slip a job into the multiproject wafer flow and
pull out a few thousand dice can be a design team's  only  access
to advanced processes.

While MOSIS slashes mask costs by sharing  mask  sets,  the  mask
vendors  themselves are addressing the issue of spiraling cost in
a different way: education. "Traditionally, design teams just did
their  design,  ran  the  design  rule  checks  and if everything
passed, they pitched the thing over the wall to  the  mask  shop.
They  didn't  know  or  care  what  happened  next," said Dan Del
Rosario, chief executive officer  of  Photronics  Inc.  (Jupiter,
Fla.). "But in the region starting at about 130 nm, that needs to
change. There are significant decisions that the design team  and
the foundry make that can substantially influence mask costs. And
those should not be transparent to the SoC designers."

The main issue, Del Rosario said, is that different  mask  layers
have different resolution requirements. Usually the poly, contact
and active-area masks will have the finest  features.  Masks  for
the upper metal layers can be comparatively crude.

In larger geometries, when even the most detailed masks still had
feature  sizes  near  the wavelength of the stepper light source,
all the masks could be produced on the same equipment  using  the
same  technology.  But  now, the critical-layer masks require the
most expensive and slow equipment and demand the  most  difficult
techniques.  "There  are  now  three  categories  of  masks," Del
Rosario said. "Out of a set  of  32,  about  two-thirds  will  be
noncritical  and  about a third will be critical. You can produce
those  masks  on  scanning-laser  equipment  with   pretty   good
throughput.  But  two  to  three  of  the masks will be extremely
critical. They will require directed e-beam  equipment.  Now  you
can  be  talking about 24 hours just to expose the mask on the e-
beam system.

"Much of the cost of the mask set depends on just  how  much  you
demand  of  those critical masks. And that in turn depends on the
process often on details of the  process  that  are  not  readily
visible to the design team."

For instance, Del Rosario said, a foundry may decide to  save  on
costs  by  using  a  248-nm stepper instead of a state-of-the-art
193-nm one to do the poly. But that forces the mask shop  to  use
the   most   difficult  available  mask  technology:  hard  phase
shifting. If the fab employs the 193-nm steppers, the  mask  shop
may  be able to use aggressive optical proximity correction (OPC)
instead of hard phase shifts, at a considerable  savings  to  the
design team.

"A typical binary mask using aggressive OPC may cost  $20k,"  Del
Rosario  said.  Moderate  phase-shift techniques using a halftone
mask cost $50,000. "If you require hard  phase  shifting,  that's
going to cost you $130k. It makes a big difference."

The problem forces designers to consider issues about which  they
have  been  blissfully indifferent. Choices of stepper, mask type
and writer type all interact with one another and with the design
rules,  and  those  differences  can  show  up  in  the range and
performance of library  cells  available  to  the  designers.  As
dimensions  continue  to  shrink  these  choices  will  also have
consequences on yield and on long-term reliability. "Part of  the
answer has to be an integration of the decision-making processes,
all the way from design through fabrication," Del Rosario said.


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