MICROELECTRONIC SYSTEMS NEWS

FILENUMBER: 1129 BEGIN_KEYWORDS 40x Reduction Power 0.5V CMOS END_KEYWORDS DATE: July 2003 TITLE: Achieving 40x Reduction in Power with 0.5V CMOS
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TITLE: Achieving 40x Reduction in Power with 0.5V CMOS

ASIC designers at the Center for  Advanced  Microelectronics  and
Biomolecular  Research,  CAMBR,  at  the University of Idaho have
developed over 25 chips that  have  flown  in  space.  The  chips
perform  a  variety of high performance digital signal processing
tasks  including   error   correction,   data   compression   and
tranformation,  and  correlation.   Since power is related to the
square of the applied voltage, ultra low-power circuits have been
designed with the power supply voltage less than one volt.

Specifically, logic and memory circuits which can operate with  a
power supply voltage of 0.5 volts have been implemented with only
one  additional  implant  being  added  to  AMI   Semiconductor's
standard  0.35-micron  CMOS  process.   An  adjustable  back-bias
circuit was then used to keep the  transistor  threshold  between
100-170  mV.   Extreme  care must be taken in the design of these
circuits to meet the specifications  for  performance  and  noise
immunity  in light of process variations and temperature changes.
When compared to a conventional  Reed-Solomon  encoder  operating
with  a  3.3V power supply, the 0.5V implementation can achieve a
40x reduction in power.  Furthermore, chips designed using  these
techniques  have  experienced no latchup problems while improving
total dose tolerance up to 200 KRad.

For additional information, access: 

   CAMBR

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