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TITLE: Third Edition of Hodges and Jackson's Text
After ten years in the making, the 3rd Edition of Hodges and
Jackson?s Analysis and Design of Digital Integrated Circuits: In
Deep Submicron Technology (ISBN: 0-07-228365-3) has been
thoroughly revised and updated by new co-author Resve Saleh of
the University of British Colombia. This new edition combines
the approachability and concise nature of the Hodges and Jackson
classic, with a complete overhaul to bring the book into the 21st
century.
THIRD EDITION FEATURES
* The book has been extensively revised to emphasize CMOS rather
than bipolar technology.
* The material on memory has been thoroughly updated and
expanded; the book now includes two chapters that cover memory
design.
* Wires have become increasingly important over the last ten
years. The revision includes coverage of this crucial topic.
* New material on optimization techniques is incorporated in the
3rd Edition.
* The outdated MOS transistor model used throughout the book has
been replaced with the now standard deep submicron model.
* The 3rd Edition features increased emphasis on SPICE
simulation.
* The problems and examples are updated to reflect recent
technology and design issues.
* Saleh brings his industry experience to bear by adding many new
industry examples throughout the book.
Table of contents:
1. Deep Submicron Digital IC Design
2. MOS Transistors
3. Fabrication, Layout, and Simulation
4. MOS Inverter Circuits
5. Static MOS Gate Circuits
6. High-Speed CMOS Logic Design
7. Transfer Gate and Dynamic Logic Design
8. Semiconductor Memory Design
9. Additional Topics in Memory Design
10. Interconnect Design
11. Power Grid and Clock Design
Appendix A: A Brief Introduction to SPICE
Appendix B: Bipolar Transistors and Circuits
To order, access: McGraw-Hill
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