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TITLE: Implementing High-Density Embedded Memory
In today's system-on-chip designs, the incorporation of high-
density embedded memory is often essential since it often
comprises 50% of the IC's area. The International Technology
Roadmap for Semiconductors predicts this will grow to over 90% by
2011 and thus will have a dominant impact on chip cost, area,
power and yield. Monolithic System Technology (MoSys) offers a
one-transistor synchronous random access memory (1T-SRAM) for
embedded applications and was recently acquired by Synopsys to
add to its DesignWare portfolio. The 1T-SRAM is actually a
dynamic bit cell with one transistor and capacitor with no
connections across the power rails. Thus, for 90-nanometer
designs, the leakage of these 1T-SRAM memories in 'retentive
standby mode' is only one-fourth that of comparably sized 6T
memories. MoSys' licensees have shipped more than 50 million
chips incorporating this technology.
For additional information, access: MoSys
NOTE: MoSys files suit to force Synopsys merger
EE Times (April 23, 2004 issue)
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FILENUMBER: 1162
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High-Density Embedded Memory
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DATE: May 2004
TITLE: Implementing High-Density Embedded Memory
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