MICROELECTRONIC SYSTEMS NEWS

FILENUMBER: 1225 BEGIN_KEYWORDS DAC Keynote Nanometer Era END_KEYWORDS DATE: July 2005 TITLE: DAC Keynote: Redefining Technology in the Nanometer Era
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TITLE: DAC Keynote: Redefining Technology in the Nanometer Era

Published on Gabe on EDA

Bernard  Meyerson,  IBM  fellow,   vice   president   and   chief
technologist  of  the  systems  and technology group of IBM Corp.
addressed the question "How does one define "technology" now that
classical  scaling  is  dead  (and  has  been for years)?" in his
keynote talk at  this  year's  DAC.  The  information  technology
industry   has   relied   upon   the  classical  scaling  in  the
semiconductor  technology  to  drive  performance   and   product
economics.  The  science  driving performance gains over the past
decades involves more than the  economic  issues  addressing  the
aerial density of transistors on a chip.

One of  the  results  of  the  transitions  across  semiconductor
process  nodes,  is  that  we  have  now  come  the  end of using
frequency  as   a   viable   metric   for   evaluating   computer
capabilities. When Gordon Moore first proposed his now famous law
1965, he was really pointing out a  principle  of  economics  and
only  incidentally covering chip density. The benefits of scaling
devices have resulted in integrated  circuits  that  are  faster,
cheaper, lower power, and enable increased functionality.

Now,  scaling  device  sizes  is  reaching  its  limits.  To   be
effective,  all  parameters,  not  just  device area, must scale,
because  power  density  should  be  constant.  However,  at  130
nanometers,  the  supply  voltages  and  oxide  thickness are not
changing  because  the  atoms  only  exist   in   discreet   unit
quantities. The dimensions of a component atoms are becoming very
large compared  to  its  image  feature  sizes,  leading  to  non
statistical  variations.  One result of not keeping power density
constant at the next process node is the growing need  to  manage
and design for power.

In previous transitions to smaller process nodes, smaller devices
resulted  in  faster  circuits.  Now,  smaller  devices equate to
cheaper parts but not improved  performance.  As  a  result,  the
focus on processor performance is no longer the key parameter and
instead system performance becomes the critical issue.

To move beyond simple dimensional scaling requires innovations in
transistors.   Science   and   creativity   will  enable  further
innovation. One example is strained silicon. By changing  silicon
lattice  structures,  one  can  effectively reduce electron mass,
resulting in vastly increased  electron  mobility.  The  opposite
strain  in the silicon lattice results in improved hole mobility.
The 90 nanometer band gap modifications  through  lattice  strain
was   the  first  production  process  using  science  to  change
performance rather than just using optical scaling.

The one difficulty in going from an optical- to  scientific-basis
for  performance  improvements  is  a need to prove the change is
manufacturable. Even more  difficult  is  the  need  to  schedule
innovation  as  much  as  20  years  before  it  is  needed.  The
transistor roadmap has  multiple  possible  directions,  and  the
domination  of  interconnect  over  most  physical  parameters is
driving into  interlayer  dielectrics  towards  lower  k  values.
Unfortunately,  as  k  approaches  1,  material  strength goes to
zero, think of a vacuum as the ultimate dielectric.

Because one method for inducing strain depends on differences  in
structural  properties,  future  process generations will need to
model  strain  as  a  part  of  the  development  for  interlayer
dielectrics.  Chemists are investigating materials to get lower k
values while also getting lower brittleness. Other techniques are
adding porosity to the interlayer dielectric materials to achieve
similar results.

Nevertheless, the 65 nanometer  technology  is  robust.  However,
physics   and   costs   intrude  into  the  deployment  scenario.
Lithography is moving to  immersion  optics,  devices  are  being
constructed  on an atomic basis, and interconnect and dielectrics
are being reengineered. Each of the changes in silicon processing
can  cost in excess of $50 million. 300 mm fabs were projected to
cost $2.5 billion. Actual costs have been running between $4  and
$6 billion. These high costs are causing changes in the industry.
Companies need to pool capital and  intellectual  property,  move
towards  more  open standards, and share the basic research. As a
result, companies must learn to differentiate later in the cycle.

Future  creation  of  value  in  semiconductors  will  require  a
holistic design, companies will need to optimize materials, chips,
software, architecture, and all other  components  as  a  system.
Technology   and   technology   innovations   by  themselves  are
insufficient for future success. Differences in  factors  due  to
changes  in  components  can  lead  to  increased  benefits.  For
example, a multiple core die will have lower power with increased
throughput,  compared  to  a  single  processor doing everything.
Compute workloads vary but today's  processors  and  the  process
they are built on are designed and optimized for the peak loads.

As designers move towards multiple cores, functions move  towards
multiple  threads.  These  multiple  threads move towards minimal
function  and   computing   requirements.   Ultimately,   virtual
functions  and virtual machines will enable increased performance
and greatly reduced power requirements. The industry will need to
change  its  objectives to scale out versus scaling for increased
circuit speed. Multiple  cores  and  subsystems  will  require  a
complex intrachip communications systems.

Some examples of multiple cores leading to  the  vastly  improved
throughput  include IBM's Blue Gene supercomputer, built with two
processors per chip and scaling across  a  number  of  chips  per
board,  the  number  of  boards  per  platform  and  a  number of
platforms  integrated  into  a  cluster  resulting   in   130,000
processors and the world's fastest supercomputer. Another example
is the new Cell processor, to be used in the next generation Sony
Play  Station.  This  is  an  application  specific processor for
extremely high-speed graphics applications.

The bottom line for all of this is that innovation drives  future
performance,  but  blind  scaling has already hit the power wall.
The preoccupation with increased clock speed will  be  supplanted
by applications specific metrics. Systems solutions will dominate
the industry as the applications  specific  computing  revolution
overcomes  the issues of costs and power. The costs of innovation
and  next-generation  manufacturing  will   accelerate   industry
consolidation.

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