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TITLE: Magnetoresistive Random Access Memory (MRAM)
Magnetoresistive Random Access Memory (MRAM) device is now in
volume production and available from Freescale Semiconductor. The
4-Mbit MRAM uses magnetic materials combined with conventional
silicon circuitry to deliver the speed of SRAM with the non-
volatility of Flash in a single, high endurance device. The part
is appropriate for applications such as networking, security,
data storage, gaming and printers and was engineered to be a
reliable, economical, single-component replacement for battery-
backed SRAM units. The device also could be used in cache
buffers, configuration storage memories and other applications
that require the speed, endurance and non-volatility of MRAM.
The 3.3-volt device featuring 35 nanosecond read and write cycle
times. It is an asynchronous memory organized as 256K words by 16
bits and is manufactured at Freescale's 200-mm Chandler Fab in
Arizona.
For additional information, access: Freescale
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FILENUMBER: 1274
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Magnetoresistive Random Access Memory (MRAM)
END_KEYWORDS
DATE: July 2006
TITLE: Magnetoresistive Random Access Memory (MRAM)
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