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TITLE: IBM announces new eDRAM
IBM Unveils World's Fastest On-Chip Dynamic Memory Technology
Breakthrough System-on-a-Chip Design Speeds Multi-Core, Graphics,
and Networking Performance While Reducing Energy
IBM Press Release
San Francisco, Calif - 14 Feb 2007: In papers presented at the
International Solid State Circuits Conference (ISSCC) today, IBM
revealed a first-of-its-kind, on-chip memory technology that
features the fastest access times ever recorded in eDRAM
(embedded dynamic random access memory).
This new technology, designed using IBM's Silicon-on-Insulator
(SOI) for high-performance at low power, vastly improves
microprocessor performance in multi-core designs and speeds the
movement of graphics in gaming, networking, and other image
intensive, multi-media applications.
The technology is expected to be a key feature of IBM's 45nm
(nanometer) microprocessor roadmap and will become available
beginning in 2008.
IBM's new eDRAM technology, designed in stress-enabled 65nm SOI
using deep trench, dramatically improves on-processor memory
performance in about one-third the space with one-fifth the
standby power of conventional SRAM (static random access memory).
"With this breakthrough solution to the processor/memory gap, IBM
is effectively doubling microprocessor performance beyond what
classical scaling alone can achieve," said Dr. Subramanian Iyer,
Distinguished Engineer and director of 45 nm technology
development at IBM. "As semiconductor components have reached the
atomic scale, design innovation at the chip-level has replaced
materials science as a key factor in continuing Moore's Law.
Today's announcement further demonstrates IBM's leadership in
this critical area of microprocessor design innovation."
IBM innovations in microelectronics and the company's
groundbreaking system-on-a-chip designs have transformed the
world of semiconductors. IBM breakthroughs include High-k, which
enhances the transistor's function while allowing it to be shrunk
beyond today's limits, dual-core and multi-core microprocessors,
copper on-chip wiring, silicon-on-insulator and silicon germanium
transistors, strained silicon, and eFUSE, a technology that
enables computer chips to automatically respond to changing
conditions. The Whit e House has awarded IBM the National Medal
of Technology, the nation's highest technical honor, for 40 years
of innovation in semiconductors.
IBM chips are the heart of the company's server and storage
systems, the world's fastest supercomputers and many of the
best-known and widely used communications and consumer
electronics brands.
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FILENUMBER: 1295
BEGIN_KEYWORDS
IBM eDRAM
END_KEYWORDS
DATE: February 2007
TITLE: IBM announces new eDRAM
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