MICROELECTRONIC SYSTEMS NEWS

FILENUMBER: 9832 BEGIN_KEYWORDS AMI MOSIS END_KEYWORDS DATE: August 1998 TITLE: AMI 0.5-MICRON PROCESS AVAILABLE VIA MOSIS
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TITLE: AMI 0.5-MICRON PROCESS AVAILABLE VIA MOSIS

MOSIS is pleased to announce a qualification run with the AMI C5 0.5u
5V process. We expect the run to close on October 28. This double
poly, triple metal, non-silicided, stacked contacts process fits the
SCN3ME_SUBM rules at a lambda of 0.3u (and the SCN3ME rules at lambda
equal to 0.35u).

If there is sufficient interest in this process, this technology will
replace the AMI CWL (0.8u) and HP 0.8u (CMOS26G) runs on the MOSIS
schedule. Dedicated runs will also be available. The HP CMOS14/AMOS14
0.5u 3.3V run schedule will NOT be impacted. Multiproject prices for
the new process will be the same as HP 0.5u.

The AMI poly2 can be used to build capacitors in a style identical to
SCNE (as for AMI 1.2u, Orbit 2u and TSMC 0.35u), but no transistors
(same as TSMC 0.35u). However, the current SCMOS capacitor rules do
not fit the C5 process. For C5 you must use the lambda values in the
last column (the published rules, shown adjacent, are still valid for
the older processes).
  
    Rule    Description                         Lambda     Lambda
    Number                                       SCNE      AMI/TSMC
   
    11.1    Minimum poly2 width                   3          7    
    11.2    Minimum poly2 spacing                 3          3    
    11.3    Minimum poly overlap of poly2         2          4    
    11.5    Minimum spacing to poly contact       3          2    
    13.3    Minimum poly2 overlap of contact      3          2    

In addition, the C5 process offers a high resistance poly layer (1000
ohms/square) by overlapping the poly2 layer.

    Description                         Lambda
   
    Minimum poly resistor width           7
    Minimum poly resistor spacing         4
    Minimum spacing to contact            2
    Minimum resistor overlap of poly2     4

We would like your feedback on this process.  At a minimum, please
provide estimates of the number of projects, submission dates and
their sizes, ESPECIALLY if you can submit a design for the qual run.
 
Thank you for your time and consideration.  Please respond by sending
a message to support@mosis.org.  We would like to receive all
responses by August 14.  If you are unable to provide a response by
that date please send it at your earliest convenience.
 
Regards,
The MOSIS Service
 
Phone: (310) 822-1511 x403, Fax: (310) 823-5624
USC/ISI, 4676 Admiralty Way, Marina del Rey, CA 90292
MOSIS



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