=================================================================
TITLE: NEW IC FABRICATION OFFERINGS VIA MOSIS
MOSIS has increased the frequency of runs for the
AMI 0.5-micron, the TSMC 0.25-micron and the TSMC 0.18-micron
processes to 12 per year (monthly).
This schedule change is made in response to user feedback on needs
for these processes.
The AMI 0.5-micron C5N process is a
5-Volt, double-poly, triple-metal, non-silicided, stacked-contact
process which fits the MOSIS SCN3ME_SUBM rules at a lambda of 0.3-micron
(and the SCN3ME rules at lambda equal to 0.35-micron).
AMI C5N Poly2/Poly1 capacitors are drawn like those for the AMI_ABN
(1.5 micron) and TSMC_0352P4M (0.35 micron) processes. The C5N process
also offers a high resistance Poly2 (1000 ohms/square). The process
supports 'no additional masks' EEPROM and high voltage options (Vds
20V, Vgs 5V) at no additional cost.
Designers can request design information for the EEPROM and high
voltage options, along with the C5 standard cell library directly
from AMI at:
AMI WWW.
In cooperation with CMP, MOSIS has added two new processes:
- BiCMOS (BYE/BYQ), SiGe (BYS) 0.8-micron for AMS
This 2-metal, 2-poly HBT-CMOS process offers a vertical NPN with Ft
of more than 35 GHz with an optional high resistive poly layer.
Pricing: $600 per sq mm (6 sq mm min)
- GaAs HEMT 0.2-micron (ED02AH from Ommic - was Philips Microwave Limeil)
This 2-metal, low-noise, pseudomorphic process provides HEMT depletion
and enhancement transistors with Ft=63 GHz and NF=0.9 dB at 12 GHz.
Pricing: $900 per sq mm - Die sizes are fixed at the following values:
1.5 mm x 1.0 mm ; 1.5 mm x 2.0 mm ; 3.0 mm x 1.0 mm; 3.0 mm x 2.0 mm
Users can check the fabrication schedule and obtain design rules by accessing:
MOSIS WWW.
=================================================================
FILENUMBER: 9944
BEGIN_KEYWORDS
IC FABRICATION MOSIS
END_KEYWORDS
DATE: December 2000
TITLE: NEW IC FABRICATION OFFERINGS VIA MOSIS
Return to MSN Home Page